WOLTE 3 European Workshop on Low Temperature ElectronicsBROGIATO, Luciana; CAMIN, Daniel V; PESSINA, G et al.Journal de physique. IV. 1998, Vol 8, Num 3, issn 1155-4339, 331 p.Conference Proceedings

A thorough analysis of self-heating effects for SOI MOSFETs on SIMOX and UNIBOND substratesJOMAAH, J; RAULY, E; GHIBAUDO, G et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.17-Pr3.20, issn 1155-4339Conference Paper

Back gate voltage and buried-oxide thickness influences on the series resistance of fully depleted SOI MOSFETS at 77 KNICOLETT, A. S; MARTINO, J. A; SIMOEN, E et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.25-Pr3.28, issn 1155-4339Conference Paper

Design of cryogenic electronics packaging for commercial productionKNAUTH, J. P; WHEATLEY, R. W.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.201-Pr3.204, issn 1155-4339Conference Paper

Fast and efficient procedures for determining the microwave noise parameters of HEMT's at decreasing temperaturesCADDEMI, A; DI PAOLA, A; SANNINO, M et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.135-Pr3.138, issn 1155-4339Conference Paper

Josephson readout electronics for the hybrid superconducting pixel detectorPAGANO, S; PALMIERI, V. G; MUKHANOV, O et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.147-Pr3.153, issn 1155-4339Conference Paper

Optimization of deep-submicrometer temperature scalable MOSFET's based on two-dimensional numerical simulationXU, J; CHENG, M.-C.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.29-Pr3.32, issn 1155-4339Conference Paper

Simulations of signal amplification and oscillations using a SNS junctionLUIZ, A. M; SOARES, V; NICOLSKY, R et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.271-Pr3.274, issn 1155-4339Conference Paper

The SuperFET : a high-performance GaAs voltage-controlled current source for cryogenic applicationsCAMIN, D. V; PESSINA, G; PREVITALI, E et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.167-Pr3.170, issn 1155-4339Conference Paper

Use of low-noise dc-SQUIDs in fundamental physics experimentsCARELLI, P; CASTELLANO, M. G; LEONI, R et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.215-Pr3.220, issn 1155-4339Conference Paper

Cryogenic behavior of low-noise monolithic preamplifiers using a JFET as a front-end elementCITTERIO, M; MANFREDI, P. F.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.155-Pr3.159, issn 1155-4339Conference Paper

Electron impact-ionization effects in UHV/CVD SiGe HBT's in the temperature range of 300 to 83 KNIU, G; GOGINENI, U; CRESSLER, J. D et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.103-Pr3.107, issn 1155-4339Conference Paper

Performance of a SQUID read-out system for superconducting tunnel junctionsMARTIN, D. D. E; PEACOCK, A.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.225-Pr3.228, issn 1155-4339Conference Paper

Perspectives of the cryo-electronics for the year 2000GUTIERREZ-D., E. A; CLAEYS, C; SIMOEN, E et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.315-Pr3.320, issn 1155-4339Conference Paper

Resonance of low-frequency collective plasma oscillations at phase-slip centersCHURILOV, G. E.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.301-Pr3.304, issn 1155-4339Conference Paper

Temperature dependence of hot-carrier effects in 0.2 μm N- and P-channel fully-depleted unibond MOSFETsRENN, S. H; RAYNAUD, C; BALESTRA, F et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.13-Pr3.16, issn 1155-4339Conference Paper

The temperature influence of substrate current in submicron N-channel MOSFETsCHEN, S.-H; CHEN, S.-L; CHUNG, S.-T et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.53-Pr3.56, issn 1155-4339Conference Paper

A cryogenic GaAs PHEMT/ferroelectric Ku-band tunable oscillatorROMANOFSKY, R. R; VAN KEULS, F. W; MIRANDA, F. A et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.171-Pr3.174, issn 1155-4339Conference Paper

A new method to extract the effective trap density at the buried oxide/underlying substrate interface in enhancement-mode SOI MOSFETs at low temperaturesPAVANELLO, M. A; MARTINO, J. A..Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.45-Pr3.48, issn 1155-4339Conference Paper

Capabilities of antenna-coupled superconducting microbolometersLEONOV, V. N.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.267-Pr3.270, issn 1155-4339Conference Paper

Comparison of the freeze-out effect in In and B doped n-MOSFETs in the range 4.2-300 KALAWNEH, I; SIMOEN, E; BIESEMANS, S et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.3-Pr3.8, issn 1155-4339Conference Paper

Express-control system of superconducting microcircuits fabrication technology by anodization spectroscopy methodVOJTOVICH, I; NAVALA, S; SHPILEVOY, P et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.309-Pr3.312, issn 1155-4339Conference Paper

Miniature temperature sensors based on Ge filmsMITIN, V. F.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.193-Pr3.195, issn 1155-4339Conference Paper

Modeling of the low temperature electron distribution function in ultra-fast transient situations for semiconductor devicesCHENG, M.-C.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.67-Pr3.70, issn 1155-4339Conference Paper

Non-equilibrium properties of Josephson critical current in Nb-based three terminal superconducting tunnel devicesAMMENDOLA, G; PARLATO, L; PELUSO, G et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.255-Pr3.258, issn 1155-4339Conference Paper